What you will do
- Responsible for developing new process for high power device, e.g., IGBT/FRD, according to the new platform or new product needs, 12” fab experience is preferred
- Hand-on experience in power IGBT process development, from R&D to mass production.
- Initiation and execution of process optimization when considering the improvement of quality, reliability, yield and efficiency
- Responsible for defining or developing test structures and defining the test specifications needed to monitor and characterize the manufacturing process
- Accountable for setting up an appropriate process monitoring (inline, PCM), specifications and reporting thereof (cp/cpk)
- Technical documents preparation, process change notice, etc.
- Leader of medium size process integration or optimization projects
- Sub-project leader of process development or integration tasks in complex projects
What you will need
- Master’s degree in Microelectronics, Physics or Semiconductor material related technical field, PhD is a plus
- At least 5 years of hands-on experience in high power device process technology development
- Experience of thin wafer process, e.g., wafer grinding, wafer backside process, e.g. implantation, laser annealing, metallization, etc.
- An in-depth understanding of power device physics, fabrication and characterization principles
- Knowledge and experience in design for reliability and robustness of power devices.
- Ability to address design, process and engineering challenges and to provide effective solutions
- Excellent communication skills is a plus
Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.
Nexperia is an Equal Opportunity/Affirmative Action Employer.
